Color Tuning in LED Devices Through StrainEffects

Authors

DOI:

https://doi.org/10.31908/19098367.662

Keywords:

Heterostructures, quantum wells, strain effect.

Abstract

In the last decades, the study of semiconductor materials has been intensified due to their potential applications in electronic mechanisms, optoelectronic devices and solar cells, among others. This type of heterostructure is important because its emission can accomplish a large range of wave lengths in visible spectrum. The ground state energy variation was studied for electrons and heavy-holes under strain effects, the results obtained were compared to those which did not take into account the effects of the tension, For this reason, they conducted simulations employing the FORTRAN programming language. Effective mass approximation was taken for simulations, besides a hydrogen-type trial function was used. Computations were made employing quantum wells based in CdTe/ZnTe heterostructure under strain effects with different widths defined in atomic layer, where it was analyzed the width of the well and height of the barrier. The simulation results indicatethat films with strain effect present a considerable increase in the quantum confinement properties for heavy-holes and a significant decrease in these properties for electrons compared to films without strain effects.

Downloads

Download data is not yet available.

Author Biographies

  • Néstor Eduardo Sánchez Ospina, Universidad Nacional de Colombia

    Ingeniero Físico y Estudiante Maestría en Ciencias Física de la Universidad Nacional de Colombia sede Manizales. Pertenece al grupo de propiedades ópticas de materiales (POM) y su trabajo se desarrolla alrededor de la Simulación del crecimiento de nanoestructuras semiconductoras. Becario visitante del grupo Computer Simulations of nanomaterials de la Facultad de Ciencias Químicas de la Universidad Nacional de Cordoba, Argentina.

  • Diana Carolina Galvez Coy, Universidad Nacional de Colombia

    ngeniera Física y Estudiante Maestría en CienciasFísica de la Universidad Nacional de Colombia sede Manizales. Pertenece al grupo de propiedades ópticas de materiales (POM) y sus trabajos se han desarrollado alrededor de síntesis de Materiales por rutas Químicas. Actualmente trabaja en síntesis de biomateriales por rutas térmicas, en especial hidroxiapatita con aleaciones de óxidos binarios con aplicaciones para sistemas pegantes-sellantes

  • Carlos Vargas-Hernández, Universidad Nacional de Colombia

    Físico (1990) y Magister en Ciencias Físicas (1994) de la Universidad Nacional de Colombia sede Bogotá. Realizó estudios en Maestría en Automatización Industrial (2013) en la Universidad Nacional de Colombia sede Manizales. Ha trabajado en la caracterización de materiales por espectroscopias Ópticas y terminó su Doctorado en Ciencias Físicas en el Centro de Investigación CINVESTAV-IPN, México, D.F. (2002). Actualmente realiza investigación alrededor de la caracterización por medio de espectroscopia Raman y SERS de nanaoestructuras crecidas por rutas asistidas por microondas. Profesor Visitante del International Center for Nanotechnology and Advanced Materials (ICNAM) Department of Physics & Astronomy, de la Universidad de Texas, San Antonio (2009- 210). Es director del grupo de Propiedades Ópticas de Materiales (POM) de la Universidad Nacional de Colombia sede Manizales, donde actualmente es profesor asociado con exclusividad.

References

C. Vargas-Hernández, et. al., XPS, SEM and XRD Investigations of CdSe Films Prepared by Chemical Bath Deposition, Physical Status Solidid (b) 242, 9, 1897 (2005).

C. Vargas-Hernández, et. al., Relaxation During the Layer by Layer Growth of Cubic CdSe onto ZnSe. O. Melo, Applied Physics Letters, 82, 1, 43 (2003).

S. MacÂkowski, et. al., Infuence of MBE Growth Conditions on Optical Properties of CdTe/ZnTe Quantum StructuresThin Solid Films, 367, 210 (2000).

Strained-Layer CdTe/ZnTe Superlattices, Physical Review B, 38, 11, 7740(1988).

H. Mariette, et. al., Optical Investigation of Confinement and Strain Effects in CdTe/Cd1-xZnx The Single Quantum Wells, Physical Review B, 38, 17, 1243(1988).

Y. P. Varshni. Temperature Dependence Of The Energy GAP In Semiconductors, Physica 34, 149 (1967).

O. Madelung, Semiconductors- Basic Data, 2nd Edition, Springer, (1996).

J. Sadowski, Exitonic Luminescence in Strained Quantum Wells, Optoelectronic Review, 4, 3, 135(1996).

R. Kostic, et. al., Optical Properties of CdTe/ZnTe Core/Shell Quantum Dots Suitable for Targeted Bioimaging, Optoelectronics and Advanced Materials- Rapid Communications, 6, 1, 121(2012).

S. Adachi, Properties of Group-IV, III–V and II–VI Semiconductors, John Wiley & Sons Ltd. (2005).

Downloads

Published

2013-06-28

Issue

Vol. 7 No. 13 (2013)

Section

Artículos

License

Copyright (c) 2019 Entre ciencia e ingeniería

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

How to Cite

[1]
“Color Tuning in LED Devices Through StrainEffects”, Entre cienc. ing., vol. 7, no. 13, pp. 54–60, Jun. 2013, doi: 10.31908/19098367.662.